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STM6960
SamHop Microelectronics Corp. Nov 12 2007 Ver1.1
Dual N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
VDSS
60V
FEATURES
( m W ) Max
ID
5A
RDS(ON)
Super high dense cell design for low RDS(ON).
60 @ VGS = 10V 75 @ VGS = 4.5V
Rugged and reliable. Surface Mount Package.
D1
8
D1
7
D2
6
D2
5
SO-8 1
1 2 3 4
S1
G1
S2
G2
ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @Ta -Pulsed
b a
Symbol VDS VGS 25 C 70 C ID IDM IS Ta= 25 C Ta=70 C PD TJ, TSTG
Limit 60 20 5 4.3 25 1.7 2 1.44 -55 to 150
Unit V V A A A A W C
Drain-Source Diode Forward Current a Maximum Power Dissipation a Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient a
1
R JA
62.5
C /W
STM6960
ELECTRICAL CHARACTERISTICS (TA 25 C unless otherwise noted)
Parameter
5
Symbol
BVDSS IDSS IGSS VGS(th) RDS(ON) ID(ON) gFS CISS COSS CRSS Rg
c
Condition
VGS 0V, ID 250uA VDS VGS 48V, VGS 0V 20V, VDS 0V
Min Typ C Max Unit
60 1 100 1.0 1.8 47 55 20 12 700 80 50 5 13 10 28 7 15 7.5 1.6 4.3 3.0 60 75 V uA nA V
m ohm m ohm
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage
ON CHARACTERISTICS b
Gate Threshold Voltage Drain-Source On-State Resistance On-State Drain Current Forward Transconductance VDS VGS, ID = 250uA VGS 10V, ID 4.5A VGS 4.5V, ID 3A VDS = 5V, VGS = 10V VDS 5V, ID 4.5A
A S
PF PF PF
DYNAMIC CHARACTERISTICS c
Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate resistance VDS =25V, VGS = 0V f =1.0MHZ VGS =0V, VDS = 0V, f=1.0MHZ
ohm
SWITCHING CHARACTERISTICS
Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
tD(ON) t tD(OFF) t Qg Qgs Qgd
VDD = 30V ID = 4.5 A VGS = 10V RGEN = 3 ohm VDS =48V, ID =4.5A,VGS =10V VDS =48V, ID =4.5A,VGS =4.5V VDS =48V, ID = 4.5 A VGS =10V
2
ns ns ns ns nC nC nC nC
S T M6960
E LE CTR ICAL CHAR ACTE R IS TICS (TA=25 C unless otherwise noted)
Parameter
Diode Forward Voltage
S ymbol
VSD
Condition
VGS = 0V, Is =1.7A
Min Typ Max Unit
0.8 1.2 V
C
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b
Notes a.S urface Mounted on FR 4 Board, t 10sec. b.Pulse Test:Pulse Width 300us, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing.
15 12 V G S =4.5V V G S =10V V G S =4V 9 V G S =3.5V 15 -55 C 12 25 C
ID, Drain C urrent(A)
ID, Drain C urrent (A)
9
6
6
3 V G S =3V 0 0 0.5 1.0 1.5 2.0 2.5 3.0
3 0 0.0
T j=125 C 0.8 1.6 2.4 3.2 4.0 4.8
V DS , Drain-to-S ource Voltage (V )
V G S , G ate-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
90 2.0
F igure 2. Trans fer C haracteris tics
R DS (ON), On-R es is tance Normalized
75
1.8 1.6 1.4 1.2 1.0 0
V G S =4.5V ID=3A V G S =10V ID=4.5A
R DS (on) (m W)
60 45 30 15 1
V G S =4.5V
V G S =10V
1
3
6
9
12
15
0
25
50
75
100
125
150
T j( C )
ID, Drain C urrent (A)
T j, J unction T emperature ( C )
F igure 3. On-R es is tance vs . Drain C urrent and G ate V oltage 3
F igure 4. On-R es is tance Variation with Drain C urrent and Temperature
S T M6960
B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage
1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 V DS =V G S ID=250uA 1.15 ID=250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150
6
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
F igure 5. G ate T hres hold V ariation with T emperature
180
F igure 6. B reakdown V oltage V ariation with T emperature
20.0
ID=4.5A
Is , S ource-drain current (A)
150
10.0 5.0
25 C
R DS (on) (m W)
120 125 C 90 60 75 C 30 0 25 C
75 C 125 C
1.0
0 2 4 6 8 10
0
0.3
0.6
0.9
1.2
1.5
V G S , G ate-S ource Voltage (V )
V S D, B ody Diode F orward V oltage (V )
F igure 7. On-R es is tance vs . G ate-S ource V oltage
F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent
4
S T M6960
V G S , G ate to S ource V oltage (V )
1200 1000
10 8 6 4 2 0 VDS =48V ID=4.5A
C , C apacitance (pF )
800 600 400 200 0 0 C rs s 5 10 15
C is s
6
C os s 20 25 30
0
2
4
6
8
10
12
14 16
V DS , Drain-to S ource Voltage (V )
Qg, T otal G ate C harge (nC )
F igure 9. C apacitance
600
S witching T ime (ns ) ID, Drain C urrent (A)
F igure 10. G ate C harge
50 30 10
RD ( ) ON L im it
10 ms
100 60 10
S
Tr Tf
10
1s
DC
0m
s
1
1 1
V DS =30V ,ID=4.5A V G S =10 V
0.1 0.03
VGS =10V S ingle P ulse T A=25 C 0.1 1 10 60
6 10
60 100 300 600
R g, G ate R es is tance (W)
V DS , Drain-S ource V oltage (V )
F igure 11.s witching characteris tics
9
F igure 12. Maximum S afe O perating Area
Normalized Transient
Thermal Resistance
1
0.5 0.2
0.1
0.1 0.05 0.02 0.01
on
P DM t1 1. 2. 3. 4. t2
0.01 0.00001 0.0001
Single Pulse 0.001 0.01 0.1 1 10
R thJ A (t)=r (t) * R thJ A R thJ A=S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2
100
1000
Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve
5
S T M6960
PAC K AG E OUT LINE DIME NS IONS S O-8
1 L
E D
0.015X45X
A
e
0.05 TYP.
B
0.016 TYP.
A1
0.008 TYP.
C
H
S Y MB OLS A A1 D E H L
MILLIME T E R S MIN 1.35 0.10 4.80 3.81 5.79 0.41 0X MAX 1.75 0.25 4.98 3.99 6.20 1.27 8X MIN 0.053 0.004 0.189 0.150 0.228 0.016 0X
INC HE S MAX 0.069 0.010 0.196 0.157 0.244 0.050 8X
6
S T M6960
SO-8 Tape and Reel Data
SO-8 Carrier Tape
unit:P
PACKAGE SOP 8N 150O A0
6.40
B0
5.20
K0
2.10
D0
r1.5 (MIN)
D1
r1.5 + 0.1 - 0.0
E
12.0 O0.3
E1
1.75
E2
5.5 O0.05
P0
8.0
P1
4.0
P2
2.0 O0.05
T
0.3 O0.05
SO-8 Reel
UNIT:P
TAPE SIZE
12 P
REEL SIZE
r330
M
330 O 1
N
62 O1.5
W
12.4 + 0.2
W1
16.8 - 0.4
H
r12.75 + 0.15
K
S
2.0 O0.15
G
R
V
7

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